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参数资料
| 型号： | GP102 |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | 1 AMP HIGH RELIABILITY SILICON DIODES |
| 中文描述： | 1安培高可靠性硅二极管 |
| 文件页数： | 2/2页 |
| 文件大小： | 341K |
| 代理商： | GP102 |
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110
Data Sheet No. GPDG-101-2B
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
FIGURE 1. FORWARD CURRENT DERATING CURVE
Ambient Temperature, C
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Number of Cycles at 60 Hz
Peak
Forward
Surge
Current
(Amperes)
§¨
!
"#
$
1 AMP HIGH RELIABILITY SILICON DIODES
%
&
'
(
)
0
1
2
0
3
4
3
H6
0.6
0.2
0
0.4
0.8
1.0
1.2
0
50
100
150
180
A
verage
Forward
Current,
Io
(Amperes)
56
Cap
acit
ance,
pF
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Reverse Voltage, (Volts)
7
89
@
ABB
FIGURE 6. PEAK FORWARD SURGE CURRENT
CD
EF
G
HII
T = 25 C
J
o
Peak
Forward
Surge
Current
(Amperes)
Pulse Duration (Milliseconds)
PQQ
RS
T
UV
UXW
Y`
acb
d
ef
ghchh
iqpsrtvu
wyx
c
d
precef
g
h
i
jkylmknporqs
tXuXv
wx
yszs{}|~
{y
Xqr~q
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
Inst
ant
aneous
Forward
Current
(Amperes)
0.6
0.7
08
0.9
1.0
1.1
1.2
1.3
0.01
0.1
1.0
qsv
X
}
sc
s
¤
Inst
ant
aneous
Reverse
Current,
I
(Microamperes)
.01
0.1
1.0
10
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Percent of Rated Peak Reverse Voltage
0
40
§c§
¨
°c±
.1
qsv
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