参数资料
型号: GP1S74PJ000F
厂商: Sharp Microelectronics
文件页数: 8/12页
文件大小: 151K
描述: SENSOR OPTO SLOT 5MM TRANS CONN
产品变化通告: Internal Chip Change 04/May/2007
标准包装: 100
检测距离: 0.197"(5mm)
检测方法: 可传导的
输出配置: 光电晶体管
电流 - DC 正向(If): 50mA
电流 - 集电极 (Ic)(最大): 20mA
电压 - 集电极发射极击穿(最大): 35V
响应时间: 3µs,4µs
安装类型: 卡入式
封装/外壳: 模块,连接器
包装: 管件
类型: 无放大
工作温度: -25°C ~ 85°C
产品目录页面: 2776 (CN2011-ZH PDF)
其它名称: 425-2450-5
8
Sheet No.: D3-A04401EN
GP1S74PJ000F
?SPAN class="pst GP1S74PJ000F_2587073_4">Design Considerations
?/DIV>
Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
 
4mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
?/DIV>
Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
?/DIV>
Parts
This product is assembled using the below parts.
  " Photodetector (qty. : 1)
Category
Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (約)
Phototransistor   Silicon (Si)
930
400 to 1 200
3
  " Photo emitter (qty. : 1)
Category
Material
Maximum light emitting
wavelength (nm)
I/O Frequency (MHz)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs)
950
0.3
  " Material
Case
Lead frame
Connector terminal  nish
Black polycarbonate resin
(UL94 V-2)
42Alloys
(No plating)
Sn plating
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