参数资料
型号: GP1UE26RK0VF
厂商: Sharp Microelectronics
文件页数: 5/6页
文件大小: 0K
描述: RECEIVER IR REM CTRL 3V 40KHZ
产品目录绘图: GP Series Front
GP Series Side
标准包装: 1,000
检测距离: 10m
B.P.F. 中心频率: 40.0kHz
电源电压: 2.7 V ~ 5.5 V
电流 - 电源: 400µA
方向: 顶视图
安装类型: 通孔
产品目录页面: 2866 (CN2011-ZH PDF)
其它名称: 425-2513
GP1UE26RK0VF/GP1UE27RK0VF Series
GP1UE28RK0VF/GP1UE28QK0VF Series
■ Precautions for Operation
1. When this infrared remote control detecting unit shall be adopted for wireless remote control, please use the following signal format .
? (NEC code,RC-6code etc.)
n
?
? Total duty ratio D t (Emitting time Σ t N / Transmitting time for 1 block T) : 40% or less.
N=1
? ON signal time and OFF signal time
Supply Voltage
V cc
2.7 to 3.0V
3.0 to 5.5V
ON signal time per 1bit
t ON
200 μ s or more
OFF signal time per 1bit
t OFF
400 μ s or more
300 μ s or more
Transmitting time for 1 block:T
T ON
t 1
t 2
t 3
t n
n
D t =( Σ t N /T)×100 (%)
N=1
In case the signal format of total duty and/or ON/OFF signal time dosen`t meet the conditions noted above, there is a
case that reception distance much reduces or output dose not appear.
2. Use the light emitting unit (remote control transmitter), in consideration of performance, characteristics, operating conditions of
light emitting device and the characteristics of the light detecting unit.
3. Pay attention to a malfunction of the light detecting unit when the surface is stained with dust and refuse.
Care must be taken not to touch the light detector surface.
If it should be dirty, wipe off such dust and refuse with soft cloth so as to prevent scratch. In case some solvents are required, use
methyl alcohol, ethyl alcohol or isopropyl alcohol only.
Also, protect the light detecting unit against flux and others, since their deposition on the unit inside causes reduction of the
function, fading of markings such as the part number.
4. The shield case should be grounded on PCB pattern.
(The area across the shield case and the GND terminal is internally non-conductive.)
5. Do not apply unnecessary force to the terminal and the case.
6. Do not push the light detector surface (photodiode) from outside.
7. To avoid the electrostatic breakdown of IC, handle the unit under the condition of grounding with human body, soldering iron, etc.
8. Do not use hole and groove set in the case of the light detecting unit for other purposes, since they are required to maintain the
specified performance.
9. External Circuit Examples (Mount the outer parts as near the unit as possible).
GND
V CC
V OUT
C O
+
R 1
GND
V e
V O
(Circuit parameters)
R 1= 47 Ω± 5%
C 1= 47 μ F
In setting R 1 and C 1 , use suitable values after considering under the real condition
The circuit constant is a example. It is difference from mounting equipment. Please select it by your mounting equipment.
This device has a transistor as protection element between V CC and GND to improve anti-static electricity proof.
Please be carefully not to apply exceeding the absolute maximum ratings of applying voltage and continuous high voltage spike
noise because there is cases that transistor will be short by secondary breakdown generally. In order to do difficultly, Please add CR
filter(47 Ω (1/10W), 10 μ F or more)such as external circuit example above near V CC .
Sheet No.: OP06006
5
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