参数资料
型号: GP2S60A
厂商: Sharp Microelectronics
文件页数: 3/15页
文件大小: 0K
描述: PHOTOINTERRUPTER REFLEC .7MM SMD
产品变化通告: Internal Chip Change 04/May/2007
标准包装: 2,000
检测距离: 0.028"(0.7mm)
检测方法: 反射
电压 - 集电极发射极击穿(最大): 35V
电流 - 集电极 (Ic)(最大): 20mA
电流 - DC 正向(If): 50mA
输出类型: 光电晶体管
响应时间: 20µs,20µs
安装类型: 表面贴装
封装/外壳: 4-SMD,无引线
包装: 散装
工作温度: -25°C ~ 85°C
GP2S60
■ Absolute Maximum Ratings
(T a = 25 ? C)
Parameter
Symbol Rating
Unit
Forward current
I F
50
mA
Input
Output
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
V R
P D
V CEO
V ECO
I C
6
75
35
6
20
V
mW
V
V
mA
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
P C
P tot
T opr
T stg
75
100
? 25 to + 85
? 40 to + 100
mW
mW
? C
? C
? 1
Soldering temperature
T sol
260
? C
?
1 For 5s or less
■ Electro-optical Characteristics
(T a = 25 ? C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX. Unit
Input
Forward voltage
Reverse current
V F
I R
I F = 20mA
V R = 6V
?
?
1.2
?
1.4 V
10 μ A
Output Collector dark current
I CEO
V CE = 20V
?
1
100 nA
? 2
Transfer ? 3
charac-
teristics
Collector Current
Leak current
Response time
Rise time
Fall time
I C
I LEAK
t r
t f
I F = 4mA, V CE = 2V
I F = 4mA, V CE = 2V
V CE = 2V, I C = 100 μ A,
R L = 1k Ω , d = 1mm
40
?
?
?
85
?
20
20
130 μ A
500 nA
100
μ s
100
?
2 The condition and arrangement of the re ? ective object are shown below.
The rank splitting of collector current (I C ) shall be executed according to the table below.
Rank
A
B
Collector current, I C [ μ A]
(I F = 4mA, V CE = 2V)
40 to 80
65 to 130
?
3 Without re ? ective object.
● Test Condition and Arrangement for Collector Current
Aluminum evaporation
d = 1mm
glass plate
Sheet No.: D3-A02101EN
3
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