参数资料
型号: GP4565
厂商: GTM CORPORATION
元件分类: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N沟道的PowerTrench MOSFET的
文件页数: 1/7页
文件大小: 405K
代理商: GP4565
GP4565
Page: 1/7
ISSUED DATE :2006/05/12
REVISED DATE :
G
G P
P 44556655
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
-
0.5334
c1
0.203
0.279
A1
0.381
-
D
9.017
10.16
A2
2.921
4.953
E
6.096
7.112
b
0.356
0.559
E1
7.620
8.255
b1
0.356
0.508
e
2.540 BSC
b2
1.143
1.778
HE
-
10.92
b3
0.762
1.143
L
2.921
3.810
c
0.203
0.356
Absolute Maximum Ratings
Ratings
Parameter
Symbol
N-channel P-channel
Unit
Drain-Source Voltage
VDS
40
-40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current3
ID @TA=25 :
7.6
-6.5
A
Continuous Drain Current3
ID @TA=70 :
6
-5.2
A
Pulsed Drain Current1
IDM
30
-30
A
Total Power Dissipation
PD @TA=25 :
2.0
W
Linear Derating Factor
0.016
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
62.5
/
: W
Pb Free Plating Product
N-CH BVDSS
40V
N-CH RDS(ON) 25m
N-CH ID
7.6A
P-CH BVDSS
-40V
N-CH RDS(ON) 33m
N-CH ID
-6.5A
L
A
SEATING PLANE
e
b
Z
E
D
c
SECTION Z - Z
b
GAUGE PLANE
DIP-8
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