参数资料
型号: GPP10B-E3/73
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 64K
描述: DIODE 1A 100V STD SMC
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 1A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 5µA @ 100V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带盒(TB)
\? GPP10A, GPP10B, GPP10D, GPP10G, GPP10J, GPP10K, GPP10M7 Www'ViShay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER TEST CONDITIONS GPP1oB
Maximuminstantaneousforward voltage
M axi m u m DC
reverse Cu rrent
at rated DCblocking voltage
T 100
Maximumjunction 4_0 Y 1 MHZ
capacitance
0C unless otherwise noted)
PARAMETER GPP1oB
Typical thermal resistance
Notell) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
ORDER Re INFDRMAT on (Example)
PREFERRED P/N UNIT WEIGHT (9) PREFERRED PACKAGE CODE DELIVERY MODE
GPP10‘J-E3/54
GPP10\J-E3/73
mu
3
DJ
Average Forward Current (A)
instantaneous Fomard Current (A)
0 25 so 75 100 I25 150 I75 b.4 0.6 as 1.0 )2 1.4 1.6 1.5 2.0
Ambient Temperature (“C) instantaneous Forward Voltage (V)Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 13-Aug-13 2 Document Number: 88641
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiQdesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9100o
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