参数资料
型号: GQZJ4.3AT/R7
元件分类: 齐纳二极管
英文描述: 4.17 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封装: ROHS COMPLIANT, GLASS, QUADROMELF-2
文件页数: 4/4页
文件大小: 95K
代理商: GQZJ4.3AT/R7
PAGE . 4
STAD-JAN.27.2004
FIG. 1 POWER DERATING CURVE
50
0
100
200
300
400
500
100
150
200
250
AMBIENT TEMPERATURE, C
O
POWER
DISSIP
A
TION,
mW
atts
0
Iz
(mA)
Vz (V)
2.4 3.3 3.9 4.3 4.7 5.1 5.6 6.8
9.1
11
12
15
20
22
24
27
10
20
30
40
50
5
10
15
20
25
30
Test Current
Iz=5mA
Fig.2 BREAKDOWN CHARACTERISTICS
RATING AND CHARACTERISTIC CURVES
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GQZJ4.7A 4.56 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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GQZJ43T/R7 42.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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