参数资料
型号: GRM42-6X5R475K10
厂商: Impala Linear Corporation
英文描述: 50/100M SOT-23 CMOS RF LDO REGULATORS
中文描述: 50/100M的SOT - 23 CMOS射频LDO稳压器
文件页数: 12/16页
文件大小: 424K
代理商: GRM42-6X5R475K10
50/100mA SOT-23 CMOS RF LDO Regulators
Impala Linear Corporation
5
(408) 574-3939
www.impalalinear.com
Sept. 1998
ILC7080/81 1.1
The ILC7080/81 LDO design is based on an advanced cir-
cuit configuration for which patent protection has been
applied. Typically it is very difficult to drive a capacitive out-
put with an amplifier. The output capacitance produces a
pole in the feedback path, which upsets the carefully tai-
lored dominant pole of the internal amplifier. Traditionally
the pole of the output capacitor has been “eliminated” by
reducing the output impedance of the regulator such that
the pole of the output capacitor is moved well beyond the
gain bandwidth product of the regulator. In practice, this is
difficult to do and still maintain high frequency operation.
Typically the output impedance of the regulator is not sim-
ply resistive, such that the reactive output impedance inter-
acts with the reactive impedance of the load resistance and
capacitance. In addition, it is necessary to place the domi-
nant pole of the circuit at a sufficiently low frequency such
that the gain of the regulator has fallen below unity before
any of the complex interactions between the output and the
load occur. The ILC7080/81 does not try to eliminate the
output pole, but incorporates it into the stability scheme.
The load and output capacitor forms a pole, which rolls off
the gain of the regulator below unity. In order to do this the
output impedance of the regulator must be high, looking like
a current source. The output stage of the regulator
becomes a transconductance amplifier, which converts a
voltage to a current with a substantial output impedance.
The circuit which drives the transconductance amplifier is
the error amplifier, which compares the regulator output to
the band gap reference and produces an error voltage as
the input to the transconductance amplifier. The error ampli-
fier has a dominant pole at low frequency and a “zero”
which cancels out the effects of the pole. The zero allows
the regulator to have gain out to the frequency where the
output pole continues to reduce the gain to unity. The con-
figuration of the poles and zero are shown in figure 1.
Instead of powering the critical circuits from the unregulat-
ed input voltage, the CMOS RF LDO powers the internal
circuits such as the bandgap, the error amplifier and most
of the transconductance amplifier from the boot strapped
regulated output voltage of the regulator. This technique
offers extremely high ripple rejection and excellent line tran-
sient response.
A block diagram of the regulator circuit used in the
ILC7080/81 is shown in figure 2, which shows the input-to-
output isolation and the cascaded sequence of amplifiers
that implement the pole-zero scheme outlined above.
The ILC7080/81 were designed in a CMOS process with
some minor additions, which allow the circuit to be used at
input voltages up to 13V. The resulting circuit exceeds the
frequency response of traditional bipolar circuits. The
ILC7080/81 is very tolerant of output load conditions with
the inclusion of both short circuit and thermal overload pro-
tection. The device has a very low dropout voltage, typical-
ly a linear response of 1mV per milliamp of load current,
and none of the quasi-saturation characteristics of a bipolar
output device. All the good features of the frequency
response and regulation are valid right to the point where
the regulator goes out of regulation in a 4mV transition
region. Because there is no base drive, the regulator is
capable of providing high current surges while remaining in
regulation. This is shown in the high peak current of 500mA
which allows for the ILC7080/81 to be used in systems that
require short burst mode operation.
DOMINANT POLE
OUTPUT POLE
85 dB
COMPENSATING
ZERO
UNITY GAIN
FREQUENCY
GAIN
Figure 1: ILC7080/81 RF LDO frequency response
Operation
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