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| 型号： | GS1332E |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 258K |
| 代理商： | GS1332E |
GS1332E
Page: 4/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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