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参数资料
| 型号： | GS152B |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 3/4页 |
| 文件大小： | 302K |
| 代理商： | GS152B |
GS152B
Page: 3/4
ISSUED DATE :2006/02/06
REVISED DATE :
Characteristics Curve
Fig 1. Drain Current v.s.
Drain-Source Voltage
Fig 3. Drain-Source On-State Resistance
v.s. Gate-Source Voltage
Fig 4. Drain-Source On-State Resistance
v.s. Drain Current
Fig 6. Gate-Source Cut-off Voltage Variance
v.s. Ambient Temperature
Fig 5. Drain-Source On-State Resistance
v.s. Ambient Temperature
Fig 2. Drain Current v.s.
Gate-Source Voltage
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| GS1A | SURFACE MOUNT RECTIFIER |
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