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参数资料
| 型号： | GS1K-T3 |
| 厂商： | WON-TOP ELECTRONICS CO LTD |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| 中文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 66K |
| 代理商： | GS1K-T3 |
GS1A – GS1M
1 of 4
2006 Won-Top Electronics
Pb
GS1A – GS1M
1.0A SURFACE MOUNT STANDARD DIODE
Features
Diffused Junction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
D
Low Power Loss
A
Built-in Strain Relief
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Characteristic
Symbol
GS1A
GS1B
GS1D
GS1G
GS1J
GS1K
GS1M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @TL = 100°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
1.10
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 125°C
IRM
5.0
200
A
Reverse Recovery Time (Note 1)
trr
2.5
S
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance (Note 3)
RθJL
30
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +175
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2 land area.
WTE
POWER SEMICONDUCTORS
SMA/DO-214AC
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.90
D
0.152
0.305
E
4.80
5.30
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
相关PDF资料 |
PDF描述 |
|---|---|
| GS1M-T3 | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| GS1BW | SURFACE MOUNT GENERAL PURPOSE RECTIFIER |
| GS1B | SURFACE MOUNT RECTIFIER VOLTAGE - 50 TO 1000 Volts CURRENT - 1.0 Ampere |
| GS1B | SURFACE MOUNT RECTIFIER |
| GS1B | TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS1K-TP | 功能描述:整流器 standard 1.0A 800V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| GS1K-TPS05 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1.0 Amp Silicon Rectifier 50 to 1000 Volts |
| GS1KW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT GENERAL PURPOSE RECTIFIER |
| GS1KWG | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT GENERAL PURPOSE RECTIFIER |
| GS1KWZ | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT GENERAL PURPOSE RECTIFIER |
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