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参数资料
| 型号： | GS2N7002 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/3页 |
| 文件大小： | 221K |
| 代理商： | GS2N7002 |
GS2N7002
Page: 1/3
ISSUED DATE :2004/09/15
REVISED DATE :2006/01/17B
G
G S
S 22N
N 77000022
N
N -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
P O
O W
W E
E R
R M
M O
O S
S F
F E
E T
T
Description
The GS2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.8
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.8
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Drain-Source Voltage
VDS
60
V
VGS
±20
V
Gate-Source Voltage
-
Continuous
-
Non-repetitive (tp 50us)
VGSM
±40
V
Continuous Drain Current
(1)
ID
500
mA
Pulsed Drain Current
(2)
IDM
800
mA
Power Dissipation
PD
225
mW
Thermal Resistance ,Junction-to-Ambient
RthJA
556
/W
:
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
60
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
1
-
2.5
V
VDS=2.5V, ID=0.25mA
Gate Body Leakage Current
IGSS
-
±100
nA
VGS=±20V, VDS=0
Zero Gate Voltage Drain Current
IDSS
-
1
uA
VDS=60V, VGS=0
On-State Drain Current
ID(ON)
500
-
mA
VDS=7.5V, VGS=10V
-
5
ID=50mA, VGS=5V
Static Drain-Source on-State Resistance
RDS(ON)
-
4.5
ID=500mA, VGS=10V
Forward Transconductance
GFS
80
-
mS
VDS>2 VDS(ON), ID=200mA
Input Capacitance
Ciss
-
50
pF
Output Capacitance
Coss
-
25
pF
Reverse Transfer Capacitance
Crss
-
5
pF
VDS=25V, VGS=0V, f=1MHz
(1)The Power Dissipation of the package may result in a continuous train current.
(2)Pulse Width
300us, Duty cycle 2%.
BVDSS
60V
RDS(ON)
4.5
ID
500mA
Pb Free Plating Product
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