参数资料
型号: GS74108J-15
厂商: Electronic Theatre Controls, Inc.
英文描述: 512K x 8 4Mb Asynchronous SRAM
中文描述: 为512k × 8 4Mb的异步SRAM
文件页数: 4/12页
文件大小: 241K
代理商: GS74108J-15
Rev: 1.06 7/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
4/12
1999, Giga Semiconductor, Inc.
GS74108TP/J
Note:
1.
2.
Input overshoot voltage should be less than V
DD
+2V and not exceed 20ns.
Input undershoot voltage should be greater than -2V and not exceed 20ns.
Notes:
1.
2.
Tested at T
A
=25°C, f=1MHz
These parameters are sampled and are not 100% tested
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12/15
V
DD
3.0
3.3
3.6
V
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
-
V
DD
+0.3
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
-
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
-40
-
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
-1uA
1uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
-1uA
1uA
Output High Voltage
V
OH
I
OH
= - 4mA
2.4
Output Low Voltage
V
OL
I
LO
= + 4mA
0.4V
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GS74108J-15I 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K x 8 4Mb Asynchronous SRAM
GS74108J-8 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K x 8 4Mb Asynchronous SRAM
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GS74108TP/J 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K x 8 4 Mb Asynchronous SRAM