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参数资料
| 型号： | GS74116AX-7I |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | DRAM |
| 英文描述： | 256K x 16 4Mb Asynchronous SRAM |
| 中文描述： | 256K × 16 4Mb的异步SRAM |
| 文件页数： | 3/14页 |
| 文件大小： | 433K |
| 代理商： | GS74116AX-7I |
Rev: 1.03 10/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
3/14
2001, Giga Semiconductor, Inc.
GS74116ATP/J/X
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Truth Table
CE
OE
WE
LB
UB
DQ
1
to DQ
8
DQ
9
to DQ
16
V
DD
Current
H
X
X
X
X
Not Selected
Not Selected
ISB
1
, ISB
2
L
L
H
L
L
Read
Read
I
DD
L
H
Read
High Z
H
L
High Z
Read
L
X
L
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
–55 to 150
o
C
相关PDF资料 |
PDF描述 |
|---|---|
| GS74116AX-7IT | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AX-7T | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AX-8 | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AX-8I | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AX-8IT | 256K x 16 4Mb Asynchronous SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS74116AX-7IT | 制造商:GSI 制造商全称:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
| GS74116AX-7T | 制造商:GSI 制造商全称:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
| GS74116AX-8 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 8NS 48FBGA - Trays |
| GS74116AX-8E | 制造商:GSI Technology 功能描述:GS74116AX-8E - Trays |
| GS74116AX-8I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 8NS 48FBGA - Trays |
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