参数资料
型号: GS8150E18
厂商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(100万x 18位)同步突发静态存储器(1,600位(100万× 18位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 8/26页
文件大小: 516K
代理商: GS8150E18
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
8/26
2000, Giga Semiconductor, Inc.
Preliminary
GS8150E18/32/36T-225/200/180/166/150/133
Byte Write Truth Table
Notes:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
相关PDF资料
PDF描述
GS8150E32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
GS8150E36 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
GS8150F18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8150F32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
GS8150F36 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
相关代理商/技术参数
参数描述
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