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参数资料
| 型号： | GS8150F36 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步静态RAM（带2位脉冲地址计数器）) |
| 中文描述： | 16Mb的（为512k × 36Bit）同步突发静态存储器（1,600位（为512k × 36位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 16/23页 |
| 文件大小： | 456K |
| 代理商： | GS8150F36 |
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
16/23
2000, Giga Semiconductor, Inc.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
WR2
WR3
WR1
WR1
WR2
WR3
tKC
Single Write
Burst Write
D2
A
D2
B
D2
C
D2
D
D3
A
D1
A
t
KL
t
KH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
Write specified byte for 2
A
and all bytes for 2
B
, 2
C
& 2
D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A
0
–An
B
A
–B
D
DQ
A
–DQ
D
Write
Deselected
Hi-Z
E
1
E
3
tS tH
tS tH
tS tH
E
2
and E
3
only sampled with ADSP or ADSC
E
1
masks ADSP
E
2
Deselected with E
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8150V18AB | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-300 | 制造商:GSI Technology 功能描述:GS8150V18AB-300 - Trays |
| GS8150V18AB-300I | 制造商:GSI Technology 功能描述:GS8150V18AB-300I - Trays |
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