- 您现在的位置：买卖IC网 > PDF目录383019 > GS8150Z18 (GSI TECHNOLOGY) 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM) PDF资料下载
参数资料
| 型号： | GS8150Z18 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM) |
| 中文描述： | 16Mb的流水线和流量，通过同步唑的SRAM（1,600位流水线式和流通型同步唑静态内存） |
| 文件页数： | 4/24页 |
| 文件大小： | 474K |
| 代理商： | GS8150Z18 |
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
4/24
2000, Giga Semiconductor, Inc.
Preliminary
GS8150Z18/36T-225/200/180/166/150/133
100-Pin TQFP Pin Descriptions
Pin Location
37, 36
35, 34, 33, 32, 100, 99, 84, 83,
82, 81, 44, 45, 46,47, 48, 49, 50
80
89
93
94
95
96
88
98
97
92
86
85
87
58, 59, 62,63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
51, 52, 53, 56, 57, 75, 78, 79,
1, 2, 3, 6, 7, 25, 28, 29, 30
51, 52, 53, 56, 57, 58, 59, 62,63
68, 69, 72, 73, 74, 75,
78, 79, 80
1, 2, 3, 6, 7, 8, 9, 12, 13
18, 19, 22, 23, 24, 25, 28, 29, 30 DQ
D1
–
DQ
D9
64
14
31
Symbol
A
0
, A
1
Type
In
Description
Burst Address Inputs; Preload the burst counter
A
2
–
A
18
In
Address Inputs
A
19
CK
B
A
B
B
B
C
B
D
W
E
1
E
2
E
3
G
ADV
CKE
In
In
In
In
In
In
In
In
In
In
In
In
In
I/O
I/O
Address Input (x18 Version Only)
Clock Input Signal
Byte Write signal for data inputs DQ
A1
-DQ
A9
; active low
Byte Write signal for data inputs DQ
B1
-DQ
B9
; active low
Byte Write signal for data inputs DQ
C1
-DQ
C9
; active low (x36 Versions Only)
Byte Write signal for data inputs DQ
D1
-DQ
D9
; active low (x36 Versions Only)
Write Enable; active low
Chip Enable; active low
Chip Enable; Active High. For self decoded depth expansion
Chip Enable; Active Low. For self decoded depth expansion
Output Enable; active low
Advance/Load; Burst address counter control pin
Clock Input Buffer Enable; active low
Byte A Data Input and Output pins (x18 Version Only)
Byte B Data Input and Output pins (x18 Version Only)
DQ
A1
–
DQ
A9
DQ
B1
–
DQ
B9
NC
—
No Connect (x18 Version Only)
DQ
A1
–
DQ
A9
I/O
Byte A Data Input and Output pins (x36 Versions Only)
DQ
B1
–
DQ
B9
I/O
Byte B Data Input and Output pins (x36 Versions Only)
DQ
C1
–
DQ
C9
I/O
I/O
In
In
In
Byte C Data Input and Output pins (x36 Versions Only)
Byte D Data Input and Output pins (x36 Versions Only)
Power down control; active high
Pipeline/Flow Through Mode Control; active low
Linear Burst Order; active low
ZZ
FT
LBO
V
DD
15, 16, 41, 65, 91
In
3.3 V power supply
5,10, 17, 21, 26, 40, 55, 60, 67,
71, 76, 90
V
SS
In
Ground
4, 11, 20, 27, 54, 61, 70, 77
V
DDQ
NC
In
3.3 V output power supply for noise reduction
38, 39, 42, 43, 66
—
No Connect
相关PDF资料 |
PDF描述 |
|---|---|
| GS8150Z36 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM) |
| GS815136 | 16Mb（512K x 36Bit) Sync Burst SRAM(16M位（512K x 36位it)同步静态RAM（带2位脉冲地址计数器）) |
| GS815118 | 16Mb（1M x 18Bit) Sync Burst SRAM(16M位（1M x 18位)同步静态RAM（带2位脉冲地址计数器）) |
| GS8151E18 | 16Mb（1M x 18Bit) Sync Burst SRAM(16M位（1M x 18位)同步静态RAM（带2位脉冲地址计数器）) |
| GS8151E36 | 16Mb（512K x 36Bit) Sync Burst SRAM(16M位（512K x 36位)同步静态RAM（带2位脉冲地址计数器）) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS815V018AB-250 | 制造商:GSI Technology 功能描述:GS815V018AB-250 - Trays |
| GS815V018AB-250I | 制造商:GSI Technology 功能描述:GS815V018AB-250I - Trays |
| GS815V018AB-300 | 制造商:GSI Technology 功能描述:GS815V018AB-300 - Trays |
| GS815V018AB-300I | 制造商:GSI Technology 功能描述:GS815V018AB-300I - Trays |
| GS815V018AB-333 | 制造商:GSI Technology 功能描述:GS815V018AB-333 - Trays |
发布紧急采购，3分钟左右您将得到回复。