参数资料
型号: GS8152Z72
厂商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM)
中文描述: 16Mb的流水线和流量,通过同步唑的SRAM(1,600位流水线式和流通型同步唑静态内存)
文件页数: 3/39页
文件大小: 757K
代理商: GS8152Z72
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
3/39
2000, Giga Semiconductor, Inc.
Preliminary
GS8152Z18/36/72B-225/200/180/166/150/133
GS8152Z72 BGA Pin Description
Pin Location
W6, V6
Symbol
A
0
, A
1
Type
I
Description
Address field LSBs and Address Counter Preset Inputs
W7, W5, V9, V8, V7, V5, V4, V3, U8, U7, U6,
U5, U4, A3, A5, A7, B7, A9
L11, M11, N11, P11, M10, N10, P10, R10
A10, B10, C10, D10, A11, B11, C11, D11, E11
J1, H1, G1, F1, J2, H2, G2, F2, E2
W2, VV2, U2, T2, W1, V1, U1, T1, R1
W10, V10, U10, T10, W11, V11, U11, T11, R11
J11, H11, G11, F11, J10, H10, G10, F10, E10
A2, B2, C2, D2, A1, B1, C1, D1, E1
L1, M1, N1, P1, L2, M2, N2, P2, R2
An
I
Address Inputs
DQ
A1
DQ
A9
DQ
B1
DQ
B9
DQ
C1
DQ
C9
DQ
D1
DQ
D9
DQ
E1
DQ
E9
DQ
F1
DQ
F9
DQ
G1
DQ
G9
DQ
H1
DQ
H9
I/O
Data Input and Output pins (x36 Version)
C9, B8, B3, C4, C8, B9, B4, C3
B
A
, B
B
, B
C
,B
D,
B
E
, B
F
, B
G
,B
H
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D,
DQ
E
,
DQ
F
, DQ
G
, DQ
H
I/Os; active low
B5, C5, C7, D4, D5, D8, K1, K2, K4, K8, K10,
T4, T5, T8, U3, U5, U7, U9
K3
NC
No Connect
CK
I
Clock Input Signal; active high
B6
W
I
Write Enable. Writes all enabled bytes; active low
C6, A8
E
1,
E
3
I
Chip Enable; active low
A4
E
2
I
Chip Enable; active high
D6
G
I
Output Enable; active low
A7
ADV
I
Burst address counter advance enable; active low
P6
ZZ
I
Sleep Mode control; active high
L6
FT
I
Flow Through or Pipeline mode; active low
T6
LBO
I
Linear Burst Order mode; active low
G6, J6, N6
MCH
I
Must Connect High
H6, K6, M6
MCL
Must Connect Low
T7
PE
I
Parity Bit Enable; active low (High = x16/32 Mode, Low = x18/36
Mode)
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