GS816018 PDF资料下载(17/28 页)1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

您好，
买卖IC网欢迎您。
请登录
免费注册

您现在的位置：买卖IC网 > PDF目录383020 > GS816018 (Electronic Theatre Controls, Inc.) 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs PDF资料下载

参数资料

型号：	GS816018
厂商：	Electronic Theatre Controls, Inc.
元件分类：	DRAM
英文描述：	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述：	1M×18，512k×32，512k×36 18M位同步突发静态存储器
文件页数：	17/28页
文件大小：	810K
代理商：	GS816018

Rev: 2.12 3/2002

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

17/28

1999, Giga Semiconductor, Inc.

Preliminary

GS816018/32/36T-250/225/200/166/150/133

AC Electrical Characteristics

Notes:

1.

2.

These parameters are sampled and are not 100% tested.

ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

Parameter

Symbol

-250

-225

-200

-166

-150

-133

Unit

Min

4.0

—

1.5

Max

—

2.5

—

Min

4.4

—

1.5

Max

—

2.7

—

Min

5.0

—

1.5

Max

—

3.0

—

Min

6.0

—

1.5

Max

—

3.4

—

Min

6.7

—

1.5

Max

—

3.8

—

Min

7.5

—

1.5

Max

—

4.0

—

Pipeline

Clock Cycle Time

Clock to Output Valid

Clock to Output Invalid

tKC

tKQ

tKQX

ns

ns

ns

Clock to Output in Low-Z

tLZ

1

tS

tH

tKC

tKQ

tKQX

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Setup time

Hold time

Clock Cycle Time

Clock to Output Valid

Clock to Output Invalid

1.2

0.2

5.5

—

3.0

—

—

—

5.5

—

1.3

0.3

6.0

—

3.0

—

—

—

6.0

—

1.4

0.4

6.5

—

3.0

—

—

—

6.5

—

1.5

0.5

7.0

—

3.0

—

—

—

7.0

—

1.5

0.5

7.5

—

3.0

—

—

—

7.5

—

1.5

0.5

8.5

—

3.0

—

—

—

8.5

—

ns

ns

ns

ns

ns

Flow

Through

Clock to Output in Low-Z

tLZ

1

tS

tH

tKH

tKL

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Setup time

Hold time

Clock HIGH Time

Clock LOW Time

Clock to Output in

High-Z

G to Output Valid

1.5

0.5

1.3

1.5

—

—

—

—

1.5

0.5

1.3

1.5

—

—

—

—

1.5

0.5

1.3

1.5

—

—

—

—

1.5

0.5

1.3

1.5

—

—

—

—

1.5

0.5

1.5

1.7

—

—

—

—

1.5

0.5

1.7

2

—

—

—

—

ns

ns

ns

ns

tHZ

1

1.5

2.3

1.5

2.5

1.5

3.0

1.5

3.0

1.5

3.0

1.5

3.0

ns

tOE

—

2.3

—

2.5

—

3.2

—

3.5

—

3.8

—

4.0

ns

G to output in Low-Z

tOLZ

1

0

—

0

—

0

—

0

—

0

—

0

—

ns

G to output in High-Z

tOHZ

1

—

2.3

—

2.5

—

3.0

—

3.0

—

3.0

—

3.0

ns

ZZ setup time

tZZS

2

5

—

5

—

5

—

5

—

5

—

5

—

ns

ZZ hold time

tZZH

2

tZZR

1

—

1

—

1

—

1

—

1

—

1

—

ns

ZZ recovery

20

—

20

—

20

—

20

—

20

—

20

—

ns

相关PDF资料	PDF描述
GS816018T-133	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133I	Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk
GS816018T-150	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-150I	Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 18x35.5 mm; Packaging: Bulk
GS816018T-166	Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk

相关代理商/技术参数	参数描述
GS816018BGT-150	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-150I	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-150IV	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-150V	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-200	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 100TQFP - Trays

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*