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| 型号： | GS816032 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步静态RAM(带2位脉冲地址计数器)) |
| 中文描述： | 16Mb的（为512k × 36Bit）同步突发静态存储器（1,600位（为512k × 36位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 12/26页 |
| 文件大小： | 518K |
| 代理商： | GS816032 |
Rev: 2.08 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/26
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-225/200/180/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to
Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of
time, may affect reliability of this component.
Note:
1.
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on Clock Input Pin
–
0.5 to 6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
–
0.5 to 3.6
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
2.375
2.5
2.7
V
I/O Supply Voltage
V
DDQ
2.375
2.5
3.6
V
Input High Voltage
V
IH
0.7 * V
DD
—
3.6
V
1
Input Low Voltage
V
IL
–
0.3
—
0.3 * VDD
V
1
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
相关PDF资料 |
PDF描述 |
|---|---|
| GS816036 | 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步静态RAM(带2位脉冲地址计数器)) |
| GS816036T-133 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-133I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-150 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-150I | 1.0A Surface Mount Schottky Barrier Rectifier, 30V, Single, SMB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS816032BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS816032BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS816032BGT-150IT | 制造商:GSI Technology 功能描述:512K X 32 (16 MEG) SYNCH BURST, SCD - Tape and Reel |
| GS816032BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS816032BGT-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
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