- 您现在的位置：买卖IC网 > PDF目录383020 > GS816032T-225 (Electronic Theatre Controls, Inc.) Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk PDF资料下载
参数资料
| 型号： | GS816032T-225 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk |
| 中文描述： | 100万× 18，512k × 32的，为512k × 36 35.7同步突发静态存储器 |
| 文件页数： | 13/28页 |
| 文件大小： | 810K |
| 代理商： | GS816032T-225 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Power Supply Voltage Ranges
V
DDQ3
Range Logic Levels
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
V
DD2
V
DDQ3
V
DDQ2
3.0
3.3
3.6
V
2.5 V Supply Voltage
3.3 V V
DDQ
I/O Supply Voltage
2.5 V V
DDQ
I/O Supply Voltage
2.3
2.5
2.7
3.6
V
3.0
3.3
V
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
V
IH
V
IL
V
IHQ
V
ILQ
2.0
—
V
DD
+ 0.3
0.8
V
DDQ
+ 0.3
0.8
V
1
–
0.3
—
V
1
2.0
—
V
1,3
–
0.3
—
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
V
IH
V
IL
V
IHQ
V
ILQ
0.6*V
DD
–
0.3
0.6*V
DD
–
0.3
—
V
DD
+ 0.3
0.3*V
DD
V
DDQ
+ 0.3
0.3*V
DD
V
1
—
V
1
—
V
1,3
—
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
相关PDF资料 |
PDF描述 |
|---|---|
| GS816032T-225I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-250 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-250I | Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk |
| GS816018 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-133 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS816032T-225I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
| GS816036BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
发布紧急采购，3分钟左右您将得到回复。