参数资料
型号: GS816032T-225I
厂商: Electronic Theatre Controls, Inc.
元件分类: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突发静态存储器
文件页数: 10/28页
文件大小: 810K
代理商: GS816032T-225I
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相关PDF资料
PDF描述
GS816032T-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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相关代理商/技术参数
参数描述
GS816032T-250 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS816036BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS816036BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays