参数资料
型号: GS816032T-250I
厂商: Electronic Theatre Controls, Inc.
英文描述: Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk
中文描述: 100万× 18,512k × 32的,为512k × 36 35.7同步突发静态存储器
文件页数: 7/28页
文件大小: 810K
代理商: GS816032T-250I
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Mode Pin Functions
Note:
There pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate
in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
H
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Output Register Control
FT
H or NC
L or NC
Power Down Control
ZZ
H
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相关PDF资料
PDF描述
GS816018 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk
GS816018T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-150I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 18x35.5 mm; Packaging: Bulk
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