参数资料
型号: GS816036
厂商: GSI TECHNOLOGY
英文描述: 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(256 × 72Bit)同步突发静态存储器(1,600位(256 × 72位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 7/26页
文件大小: 518K
代理商: GS816036
Rev: 2.08 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/26
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-225/200/180/166/150/133
Mode Pin Functions
Note:
There is a pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
H
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Output Register Control
FT
H or NC
L or NC
Power Down Control
ZZ
H
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相关PDF资料
PDF描述
GS816036T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-133I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-150I 1.0A Surface Mount Schottky Barrier Rectifier, 30V, Single, SMB
GS816036T-166 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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