参数资料
型号: GS816036T-133
厂商: Electronic Theatre Controls, Inc.
元件分类: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突发静态存储器
文件页数: 17/28页
文件大小: 810K
代理商: GS816036T-133
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.5
Max
2.5
Min
4.4
1.5
Max
2.7
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.4
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.2
0.2
5.5
3.0
5.5
1.3
0.3
6.0
3.0
6.0
1.4
0.4
6.5
3.0
6.5
1.5
0.5
7.0
3.0
7.0
1.5
0.5
7.5
3.0
7.5
1.5
0.5
8.5
3.0
8.5
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.5
1.7
1.5
0.5
1.7
2
ns
ns
ns
ns
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.3
2.5
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
20
20
20
20
20
20
ns
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GS816036T-133I 制造商:未知厂家 制造商全称:未知厂家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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