型号: | GS816036T-200 |
厂商: | Electronic Theatre Controls, Inc. |
元件分类: | DRAM |
英文描述: | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
中文描述: | 1M×18,512k×32,512k×36 18M位同步突发静态存储器 |
文件页数: | 15/28页 |
文件大小: | 810K |
代理商: | GS816036T-200 |
相关PDF资料 |
PDF描述 |
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GS816036T-200I | Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 |
GS816036T-225 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS816036T-225I | Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 |
GS816036T-250 | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
GS816036T-250I | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
相关代理商/技术参数 |
参数描述 |
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GS816036T-200I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS816036T-225 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS816036T-225I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS816036T-250 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS816036T-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |