- 您现在的位置：买卖IC网 > PDF目录383020 > GS816036T-250I (Electronic Theatre Controls, Inc.) Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 PDF资料下载
参数资料
| 型号： | GS816036T-250I |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
| 中文描述： | 100万× 18，512k × 32的，为512k × 36 35.7同步突发静态存储器 |
| 文件页数： | 9/28页 |
| 文件大小： | 810K |
| 代理商： | GS816036T-250I |
第1页第2页第3页第4页第5页第6页第7页第8页当前第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
9/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
X
X
X
R
R
W
CR
CR
CW
CW
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Notes:
1.
X = Don’t Care, H = High, L = Low
2.
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1
3.
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5.
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
7.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
None
None
None
External
External
External
Next
Next
Next
Next
Current
Current
Current
Current
H
L
L
L
L
L
X
H
X
H
X
H
X
H
X
F
F
T
T
T
X
X
X
X
X
X
X
X
X
L
H
L
H
H
H
X
H
X
H
X
H
X
L
X
L
X
L
L
H
H
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
H
H
H
H
X
X
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
High-Z
High-Z
Q
Q
D
Q
Q
D
D
Q
Q
D
D
相关PDF资料 |
PDF描述 |
|---|---|
| GS8160E18 | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步静态RAM(带2位脉冲地址计数器)) |
| GS8160E32 | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步静态RAM(带2位脉冲地址计数器)) |
| GS8160E36 | 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步静态RAM(带2位脉冲地址计数器)) |
| GS8160F18 | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步静态RAM(带2位脉冲地址计数器)) |
| GS8160F32 | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步静态RAM(带2位脉冲地址计数器)) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8160E18BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 100TQFP - Trays |
发布紧急采购，3分钟左右您将得到回复。