参数资料
型号: GS8160E36
厂商: GSI TECHNOLOGY
英文描述: 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(256 × 72Bit)同步突发静态存储器(1,600位(256 × 72位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 11/26页
文件大小: 519K
代理商: GS8160E36
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相关PDF资料
PDF描述
GS8160F18 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8160F32 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
GS8160F36 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步静态RAM(带2位脉冲地址计数器))
GS8160Z18 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18T-133 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相关代理商/技术参数
参数描述
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GS8160E36BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS8160E36BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS8160E36BGT-150V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS8160E36BGT-200 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 100TQFP - Trays