参数资料
型号: GS8160Z18BT-200T
厂商: Electronic Theatre Controls, Inc.
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 35.7流水线和流量,通过同步唑的SRAM
文件页数: 14/23页
文件大小: 597K
代理商: GS8160Z18BT-200T
GS8160Z18/36BT-250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 8/2004
14/23
2004, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相关PDF资料
PDF描述
GS8160Z36BT-200T RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 09V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82%
GS8160Z18BT-150T 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250IT 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8160Z18BT-200V 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250IT 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18BT-250IV 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM