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参数资料
| 型号： | GS8161E18BGD-200 |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 1M X 18 CACHE SRAM, 6.5 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件页数： | 10/35页 |
| 文件大小： | 766K |
| 代理商： | GS8161E18BGD-200 |
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GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
10/35
2004, GSI Technology
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
H
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Output Register Control
FT
H or NC
L or NC
Power Down Control
ZZ
H
Note:
There are pull-up devices on the FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate
in the default states as specified in the above tables.
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Burst Counter Sequences
BPR 1999.05.18
相关PDF资料 |
PDF描述 |
|---|---|
| GS8161E18BT-250V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-200IV | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-200V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-250IV | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-250V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8161E18BGD-200I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200V | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
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