参数资料
型号: GS8161E18T-200
厂商: Electronic Theatre Controls, Inc.
英文描述: Quad 2-input Exclusive-OR gates 14-SO 0 to 70
中文描述: 100万× 18,512k × 32的,为512k × 36 35.7同步突发静态存储器
文件页数: 11/36页
文件大小: 939K
代理商: GS8161E18T-200
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
11/36
1998, GSI Technology
Pipelined and Flow Through Read Write Control State Diagram
Deselect
New Read
New Write
Burst Read
Burst Write
W
R
B
R
B
W
D
D
B
B
W
R
D
B
W
R
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes:
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Synchronous Truth Table.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for
Pipelined and Flow Through Read/Write Control State Diagram
W
R
相关PDF资料
PDF描述
GS8161E18T-200I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS8161E18T-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-250 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs