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参数资料
| 型号： | GS8161E36BGT-200IV |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 |
| 封装： | ROHS COMPLIANT, TQFP-100 |
| 文件页数： | 10/35页 |
| 文件大小： | 779K |
| 代理商： | GS8161E36BGT-200IV |
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GS8161ExxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
10/35
2004, GSI Technology
Mode Pin Functions
Mode Name
Pin Name
State
L
H
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
H
Single/Dual Cycle Deselect Control
SCD
L
H or NC
L
H or NC
FLXDrive Output Impedance Control
ZQ
Note:
There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in
the default states as specified in the above table.
There are pull-up devices on the ZQ and SCD pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip
will operate in the default states as specified in the above tables.
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Burst Counter Sequences
BPR 1999.05.18
相关PDF资料 |
PDF描述 |
|---|---|
| GS8161E36BGT-200V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BGT-250IV | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BGT-250V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-150IV | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-150V | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8161E36BGT-200V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 6.5NS/3NS 100TQFP - Trays |
| GS8161E36BGT-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 100TQFP - Trays |
| GS8161E36BGT-250I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 100TQFP - Trays |
| GS8161E36BGT-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 5.5NS/3NS 100TQFP - Trays |
| GS8161E36BGT-250V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 5.5NS/3NS 100TQFP - Trays |
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