参数资料
型号: GS8161E36BT-150IV
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
封装: TQFP-100
文件页数: 9/35页
文件大小: 779K
代理商: GS8161E36BT-150IV
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D
Q
D
Q
Register
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
R
D
Q
R
A0
An
LBO
ADV
CK
ADSC
ADSP
GW
BW
B
A
E
1
FT
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q
D
DQx1
DQx9
36
36
Note: Only x36 version shown for simplicity.
DCD=
0
36
36
B
B
B
C
B
D
GS8161ExxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
9/35
2004, GSI Technology
GS8161E18/32/36B-xxxV Block Diagram
相关PDF资料
PDF描述
GS8161E36BT-150V 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CD-300 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD-250 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD-250I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS8161E36BT-150V 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200IV 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200V 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs