参数资料
型号: GS8161E36BT-250I
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
封装: TQFP-100
文件页数: 9/35页
文件大小: 766K
代理商: GS8161E36BT-250I
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
9/35
2004, GSI Technology
GS8161E18/32/36B Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D
Q
D
Q
Register
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
R
D
Q
R
A0–An
LBO
ADV
CK
ADSC
ADSP
GW
BW
B
A
E
1
E
2
E
3
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q
D
DQx1–DQx9
Note: Only x36 version shown for simplicity.
B
B
B
C
B
D
相关PDF资料
PDF描述
GS8161E18BD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BD-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-150 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-150I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-200 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS8161E36BT-250IV 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-250V 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-133 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-133I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-150 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs