参数资料
型号: GS8161E36D-166I
厂商: Electronic Theatre Controls, Inc.
英文描述: 25-Bit Configurable Registered Buffer With SSTL_18 Inputs and Outputs 96-LFBGA 0 to 70
中文描述: 100万× 18,512k × 32的,为512k × 36 35.7同步突发静态存储器
文件页数: 12/36页
文件大小: 939K
代理商: GS8161E36D-166I
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
12/36
1998, GSI Technology
Pipeline Mode Data I/O State Diagram
Intermediate
Intermediate
Intermediate
Intermediate
Intermediate
Intermediate
High Z
(Data In)
Data Out
(Q Valid)
High Z
B W
B
R
B
D
R
W
R
W
D
D
Current State (n)
Next State (n+2)
Transition
Input Command Code
Key
Transition
Intermediate State (N+1)
Notes:
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Truth Tables.
Clock (CK)
Command
Current State
Intermediate
State
n
n+1
n+2
n+3
Current State and Next State Definition for
Pipeline Mode Data I/O State Diagram
Next State
相关PDF资料
PDF描述
GS8161E36D-200 25-Bit Configurable Registered Buffer With SSTL_18 Inputs and Outputs 96-LFBGA 0 to 70
GS8161E36D-200I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-225 25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70
GS8161Z18D-250I 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70
GS8161Z18D-250IT 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相关代理商/技术参数
参数描述
GS8161E36D-200 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-225 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-225I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-250 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs