参数资料
型号: GS8161Z18D-250I
厂商: Electronic Theatre Controls, Inc.
英文描述: 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70
中文描述: 35.7流水线和流量,通过同步唑的SRAM
文件页数: 10/36页
文件大小: 939K
代理商: GS8161Z18D-250I
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
10/36
1998, GSI Technology
Synchronous Truth Table
Operation
Type
Address
CK CKE ADV W Bx E
1
E
2
E
3
G ZZ
DQ
Notes
Read Cycle, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
L
L
Q
Read Cycle, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
L
L
Q
1,10
NOP/Read, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
H
L
High-Z
2
Dummy Read, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
H
L
High-Z
1,2,10
Write Cycle, Begin Burst
W
External
L-H
L
L
L
L
L
H
L
X
L
D
3
Write Cycle, Continue Burst
B
Next
L-H
L
H
X
L
X
X
X
X
L
D
1,3,10
Write Abort, Continue Burst
B
Next
L-H
L
H
X
H
X
X
X
X
L
High-Z 1,2,3,10
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
H
X
X
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
X
H
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
L
X
X
L
High-Z
Deselect Cycle
D
None
L-H
L
L
L
H
L
H
L
X
L
High-Z
1
Deselect Cycle, Continue
D
None
L-H
L
H
X
X
X
X
X
X
L
High-Z
1
Sleep Mode
None
X
X
X
X
X
X
X
X
X
H
High-Z
Clock Edge Ignore, Stall
Current
L-H
H
X
X
X
X
X
X
X
L
-
4
Notes:
1.
Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-
lect cycle is executed first.
Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W
pin is sampled low but no Byte Write pins are active so no write operation is performed.
G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during
write cycles.
If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus
will remain in High Z.
X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write
signals are Low
All inputs, except G and ZZ must meet setup and hold times of rising clock edge.
Wait states can be inserted by setting CKE high.
This device contains circuitry that ensures all outputs are in High Z during power-up.
A 2-bit burst counter is incorporated.
10. The address counter is incriminated for all Burst continue cycles.
2.
3.
4.
5.
6.
7.
8.
9.
相关PDF资料
PDF描述
GS8161Z18D-250IT 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18D-250T 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18T-133 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70
GS8161Z18T-133I 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 64-TSSOP 0 to 70
GS8161Z18T-133IT 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 64-TSSOP 0 to 70
相关代理商/技术参数
参数描述
GS8161Z18D-250IT 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18D-250T 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18DD-150 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161Z18DD-150I 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161Z18DD-150IV 制造商:GSI Technology 功能描述:165 BGA - Bulk