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参数资料
| 型号： | GS8161Z32BD-250V |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 512K X 32 ZBT SRAM, 5.5 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, FPBGA-165 |
| 文件页数： | 15/35页 |
| 文件大小： | 790K |
| 代理商： | GS8161Z32BD-250V |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页当前第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
15/35
2004, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
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| GS8161Z32BGD-150IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-150V | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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| GS8161Z32BGD-250IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8161Z32BGD-150IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-150V | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-200IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-200V | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-250IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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