- 您现在的位置：买卖IC网 > PDF目录383027 > GS8161Z32BGD-200V (GSI TECHNOLOGY) 18Mb Pipelined and Flow Through Synchronous NBT SRAM PDF资料下载
参数资料
| 型号： | GS8161Z32BGD-200V |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 512K X 32 ZBT SRAM, 6.5 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件页数： | 4/35页 |
| 文件大小： | 790K |
| 代理商： | GS8161Z32BGD-200V |
第1页第2页第3页当前第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页
100-Pin TQFP Pin Descriptions
Symbol
Type
Description
A
0
, A
1
In
Burst Address Inputs; Preload the burst counter
A
In
Address Inputs
CK
In
Clock Input Signal
B
A
In
Byte Write signal for data inputs DQ
A1
–DQ
A9
; active low
B
B
In
Byte Write signal for data inputs DQ
B1
–DQ
B9
; active low
B
C
In
Byte Write signal for data inputs DQ
C1
–DQ
C9
; active low
B
D
In
Byte Write signal for data inputs DQ
D1
–DQ
D9
; active low
W
In
Write Enable; active low
E
1
In
Chip Enable; active low
E
2
In
Chip Enable—Active High. For self decoded depth expansion
E
3
In
Chip Enable—Active Low. For self decoded depth expansion
G
In
Output Enable; active low
ADV
In
Advance/Load; Burst address counter control pin
CKE
In
Clock Input Buffer Enable; active low
NC
—
No Connect
DQ
A
I/O
Byte A Data Input and Output pins
DQ
B
I/O
Byte B Data Input and Output pins
DQ
C
I/O
Byte C Data Input and Output pins
DQ
D
I/O
Byte D Data Input and Output pins
ZZ
In
Power down control; active high
FT
In
Pipeline/Flow Through Mode Control; active low
LBO
In
Linear Burst Order; active low.
V
DD
In
Core power supply
V
SS
In
Ground
V
DDQ
In
Output driver power supply
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
4/35
2004, GSI Technology
相关PDF资料 |
PDF描述 |
|---|---|
| GS8161Z32BGD-250IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD-150IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD-150V | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD-200IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD-200V | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8161Z32BGD-250IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-250V | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32D | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32D-133 | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32D-133I | 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
发布紧急采购，3分钟左右您将得到回复。