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参数资料
| 型号： | GS8162Z18BD-150I |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 18 ZBT SRAM, 7.5 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, FPBGA-165 |
| 文件页数： | 13/34页 |
| 文件大小： | 788K |
| 代理商： | GS8162Z18BD-150I |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8162Z18/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04a 2/2006
13/34
2004, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I
SB
2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I
SB
2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tZZR
tZZH
tZZS
tKL
tKH
tKC
CK
ZZ
Designing for Compatibility
The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal
found on Bump 5R. Not all vendors offer this option, however most mark Bump 5R as V
DD
or V
DDQ
on pipelined parts and V
SS
on flow through parts. GSI NBT SRAMs are fully compatible with these sockets.
相关PDF资料 |
PDF描述 |
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| GS8162Z18BD-200 | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8162Z18BD-200I | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8162Z18BD-250 | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8162Z18BD-250I | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8162Z18BD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8162Z18BD-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8162Z18BD-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8162Z18BD-200M | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8162Z18BD-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 6.5NS/3NS 165FPBGA - Trays |
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