参数资料
型号: GS8162Z18D-133I
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件页数: 8/38页
文件大小: 838K
代理商: GS8162Z18D-133I
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GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.21 11/2004
8/38
1999, GSI Technology
GS8162Z18/36 119-Bump and 165-Bump BGA Pin Description
BPR1999.05.18
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
B
A
, B
B
, B
C
, B
NC
CK
CKE
Type
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
I/O
Data Input and Output pins
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
I/Os; active low
No Connect
Clock Input Signal; active high
Clock Enable; active low
I
I
PE
W
E
1
E
3
E
2
G
ADV
ZZ
FT
LBO
I
Parity Bit Enable; active low (High = x16/32 Mode, Low = x18/36 Mode)
I
I
I
I
I
I
I
I
I
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
V
DD
V
SS
V
DDQ
I
Scan Test Clock
I
Core power supply
I
I/O and Core Ground
I
Output driver power supply
相关PDF资料
PDF描述
GS8162Z18D-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8162Z18D-166I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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