参数资料
型号: GS8162Z36BGD-200V
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 512K X 36 ZBT SRAM, 6.5 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件页数: 18/33页
文件大小: 805K
代理商: GS8162Z36BGD-200V
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
5.0
6.7
ns
Clock to Output Valid (x18/x36)
tKQ
3.0
3.0
3.8
ns
Clock to Output Valid (x72)
tKQ
3.0
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
ns
Setup time
tS
1.5
1.5
1.5
ns
Hold time
tH
0.2
0.4
0.5
ns
Flow Through
Clock Cycle Time
tKC
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
ns
Setup time
tS
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.7
1.7
1.7
ns
Clock to Output in
High-Z
(x18/x36)
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
Clock to Output in
High-Z
(x72)
tHZ
1
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
(x18/x36)
tOE
2.5
3.0
3.8
ns
G to Output Valid
(x72)
tOE
3.0
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
G to output in High-Z
(x18/x36)
tOHZ
1
2.5
3.0
3.8
ns
G to output in High-Z
(x72)
tOHZ
1
3.0
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
ns
ZZ recovery
tZZR
20
20
20
ns
GS8162ZxxB(B/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
18/33
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相关PDF资料
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GS8162Z36BGD-250V 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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