参数资料
型号: GS8162Z36BGD-250V
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 512K X 36 ZBT SRAM, 5.5 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件页数: 17/33页
文件大小: 805K
代理商: GS8162Z36BGD-250V
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
-150
Unit
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
(x72)
Pipeline
I
DD
I
DDQ
350
75
360
75
290
55
300
55
230
40
240
40
mA
Flow Through
I
DD
I
DDQ
265
50
275
50
230
45
240
45
210
40
220
40
mA
(x32/
x36)
Pipeline
I
DD
I
DDQ
290
40
300
40
240
30
250
30
190
20
200
20
mA
Flow Through
I
DD
I
DDQ
220
20
230
20
190
15
200
15
175
15
185
15
mA
(x18)
Pipeline
I
DD
I
DDQ
260
20
270
20
215
15
225
15
170
15
180
15
mA
Flow Through
I
DD
I
DDQ
200
10
210
10
175
10
185
10
160
10
170
10
mA
Standby
Current
ZZ
V
DD
– 0.2 V
Pipeline
I
SB
40
50
40
50
40
50
mA
Flow Through
I
SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
Pipeline
I
DD
85
90
75
80
60
65
mA
Flow Through
I
DD
60
65
50
55
50
55
mA
GS8162ZxxB(B/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
17/33
2004, GSI Technology
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD
and V
DDQ
operation.
All parameters listed are worst case scenario.
相关PDF资料
PDF描述
GS8162Z18D-200 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18B 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18B-133 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18B-133I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18B-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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