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参数资料
| 型号： | GS864218B-167V |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 8 ns, PBGA119 |
| 封装： | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
| 文件页数： | 11/35页 |
| 文件大小： | 934K |
| 代理商： | GS864218B-167V |
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Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
X
X
X
R
R
W
CR
CR
CW
CW
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Notes:
1.
X = Don’t Care, H = High, L = Low
2.
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1
3.
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5.
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
7.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
None
None
None
External
External
External
Next
Next
Next
Next
Current
Current
Current
Current
H
L
L
L
L
L
X
H
X
H
X
H
X
H
X
F
F
T
T
T
X
X
X
X
X
X
X
X
X
L
H
L
H
H
H
X
H
X
H
X
H
X
L
X
L
X
L
L
H
H
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
H
H
H
H
X
X
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
High-Z
High-Z
Q
Q
D
Q
Q
D
D
Q
Q
D
D
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
11/35
2004, GSI Technology
相关PDF资料 |
PDF描述 |
|---|---|
| GS864218B-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-200V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-250IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-250V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS864218B-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 7.5NS/3NS 119FBGA - Trays |
| GS864218B-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 7.5NS/3NS 119FBGA - Trays |
| GS864218B-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 119FPBGA - Trays |
| GS864218B-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 119FPBGA - Trays |
| GS864218B-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 119FBGA - Trays |
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