参数资料
型号: GS864218GB-200IV
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
封装: 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
文件页数: 4/35页
文件大小: 934K
代理商: GS864218GB-200IV
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
4/35
2004, GSI Technology
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
GS864272C-xxxV 209-Bump BGA Pin Description (Continued)
Symbol
Type
Description
相关PDF资料
PDF描述
GS864218GB-200V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-250IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS864218GB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 119FBGA - Trays
GS864218GB-250IV 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-250V 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-300 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 119FBGA - Trays
GS864236B-167 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 8NS/3.5NS 119FBGA - Trays