参数资料
型号: GS864218GB-250IV
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 6.5 ns, PBGA119
封装: 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
文件页数: 31/35页
文件大小: 934K
代理商: GS864218GB-250IV
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
31/35
2004, GSI Technology
209 BGA Package Drawing (Package C)
14 mm x 22 mm Body, 1.0 mm Bump Pitch, 11 x 19 Bump Array
A
A1
C
b
e
e
E
E
D1
D
aaa
Bottom View
Side View
Symbol
Min
Typ
Max
Units
Symbol
Min
Typ
Max
Units
A
1.70
mm
D1
18.0 (BSC)
mm
A1
0.40
0.50
0.60
mm
E
13.9
14.0
14.1
mm
b
0.50
0.60
0.70
mm
E1
10.0 (BSC)
mm
c
0.31
0.36
0.38
mm
e
1.00 (BSC)
mm
D
21.9
22.0
22.1
mm
aaa
0.15
mm
Rev 1.0
相关PDF资料
PDF描述
GS864218GB-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-200IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-200V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS864218GB-250V 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-300 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 119FBGA - Trays
GS864236B-167 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 8NS/3.5NS 119FBGA - Trays
GS864236B-167IV 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-167V 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs