参数资料
型号: GS864236B-200V
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 36 CACHE SRAM, 7.5 ns, PBGA119
封装: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件页数: 30/35页
文件大小: 934K
代理商: GS864236B-200V
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
30/35
2004, GSI Technology
JTAG Port Timing Diagram
tTH
tTS
tTKQ
tTH
tTS
tTH
tTS
tTKL
tTKH
tTKC
TCK
TDI
TMS
TDO
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
ns
TCK Low to TDO Valid
tTKQ
20
ns
TCK High Pulse Width
tTKH
20
ns
TCK Low Pulse Width
tTKL
20
ns
TDI & TMS Set Up Time
tTS
10
ns
TDI & TMS Hold Time
tTH
10
ns
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
相关PDF资料
PDF描述
GS864236B-250IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236GB-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8642Z18GB-167I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8642Z18B 72Mb Pipelined and Flow Through Synchronous NBT SRAM
相关代理商/技术参数
参数描述
GS864236B-250IV 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236B-250M 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 6.5NS/2.5NS 119FBGA - Trays
GS864236B-250V 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236GB-167IV 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236GB-167V 制造商:GSI 制造商全称:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs