参数资料
型号: GS8642Z18GB-200
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 4M X 18 ZBT SRAM, 7.5 ns, PBGA119
封装: 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
文件页数: 17/34页
文件大小: 872K
代理商: GS8642Z18GB-200
Product Preview
GS8642Z18(B)/GS8642Z36(B)/GS8642Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 5/2005
17/34
2004, GSI Technology
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
= 0 V
4
5
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0 V
6
7
pF
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Conditions
Input high level
V
DD
– 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
V
DDQ
/2
Output reference level
V
DDQ
/2
Output load
Fig. 1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
= 2.5 V)
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GS8642Z18GB-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8642Z18GB-250 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8642Z18GB-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8642Z18GB-300 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8642Z18GB-300I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM