参数资料
型号: GS8642Z72GC-300
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 72 ZBT SRAM, 5.5 ns, PBGA209
封装: 22 X 14 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
文件页数: 7/34页
文件大小: 872K
代理商: GS8642Z72GC-300
Product Preview
GS8642Z18(B)/GS8642Z36(B)/GS8642Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 5/2005
7/34
2004, GSI Technology
GS8642Z18/36 119-Bump BGA Pin Description
Symbol
Type
Description
A
0
, A
1
I
Address field LSBs and Address Counter Preset Inputs
An
I
Address Inputs
DQ
A
DQ
B
DQ
C
DQ
D
I/O
Data Input and Output pins
B
A
, B
B
, B
C
, B
D
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
NC
No Connect
CK
I
Clock Input Signal; active high
CKE
I
Clock Enable; active low
W
I
Write Enable; active low
E
1
I
Chip Enable; active low
E
3
I
Chip Enable; active low
E
2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable
ZZ
I
Sleep mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control
Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
BPR1999.05.18
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