参数资料
型号: GS8662R08E-200
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述: 8M X 8 DDR SRAM, 0.45 ns, PBGA165
封装: 15 MM X 17 MM, 1MM PITCH, FPBGA-165
文件页数: 18/37页
文件大小: 942K
代理商: GS8662R08E-200
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
= 0 V
4
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
6
7
pF
Clock Capacitance
C
CLK
5
6
pF
Note:
This parameter is sample tested.
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
18/37
2005, GSI Technology
AC Test Conditions
Parameter
Conditions
Input high level
V
DDQ
Input low level
0 V
Max. input slew rate
2 V/ns
Input reference level
V
DDQ
/2
Output reference level
V
DDQ
/2
Note:
Test conditions as specified with output loading as shown unless otherwise noted.
DQ
VT = V
DDQ
/2
50
RQ = 250
(HSTL I/O)
V
REF
= 0.75 V
AC Test Load Diagram
Input and Output Leakage Characteristics
Parameter
Symbol
Test Conditions
Min.
Max
Notes
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
–2 uA
2 uA
Doff
I
INDOFF
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
–100 uA
–2 uA
2 uA
2 uA
Output Leakage Current
I
OL
Output Disable,
V
OUT
= 0 to V
DDQ
–2 uA
2 uA
= 3.3 V)
相关PDF资料
PDF描述
GS8662R08E-200I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-250 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-250I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-300 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-300I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
相关代理商/技术参数
参数描述
GS8662R08E-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-250 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-300 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-300I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM