参数资料
型号: GS8662R08GE-167
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述: 8M X 8 DDR SRAM, 0.5 ns, PBGA165
封装: 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件页数: 12/37页
文件大小: 942K
代理商: GS8662R08GE-167
B4 Byte Write Clock Truth Table
BW
BW
BW
BW
Current Operation
D
D
D
D
K
(t
n+1
)
K
(t
n+1
)
K
(t
n+2
)
K
(t
n+2
)
K
(t
n
)
K
(t
n+1
)
K
(t
n+1
)
K
(t
n+2
)
K
(t
n+2
)
T
T
T
T
Write
Dx stored if BWn = 0 in all four data transfers
D0
D2
D3
D4
T
F
F
F
Write
Dx stored if BWn = 0 in 1st data transfer only
D0
X
X
X
F
T
F
F
Write
Dx stored if BWn = 0 in 2nd data transfer only
X
D1
X
X
F
F
T
F
Write
Dx stored if BWn = 0 in 3rd data transfer only
X
X
D2
X
F
F
F
T
Write
Dx stored if BWn = 0 in 4th data transfer only
X
X
X
D3
F
F
F
F
Write Abort
No Dx stored in any of the four data transfers
X
X
X
X
Notes:
1.
2.
“1” = input “high”; “0” = input “low”; “X” = input “don’t care”; “T” = input “true”; “F” = input “false”.
If one or more BWn = 0, then BW = “T”, else BW = “F”.
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
12/37
2005, GSI Technology
*Assuming stable conditions, the RAM can achieve optimum impedance within 1024 cycles.
相关PDF资料
PDF描述
GS8662R08GE-167I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-200 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-200I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-250 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-250I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
相关代理商/技术参数
参数描述
GS8662R08GE-167I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-200 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-250 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08GE-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM